Wed. Jul 17th, 2024

Transistors less than one nanometer in size have been grown in South Korea

Natasha Kumar By Natasha Kumar Jul10,2024

U Transistors with a size of less than one nanometer were grown in South Korea

A new method of epitaxial growth of one-dimensional metal materials with a diameter of less than 1 nm was proposed by experts from South Korea. And applied this process to the design of a structure for two-dimensional field-effect transistors, creating a 0.4-nm-wide gate electrode to work with a 3.9-nm-wide transistor channel. Moreover, one-dimensional metals were used as electrodes. The development could become a key technology in the production of low-power, high-performance electronic devices of the future. The new technology is an alternative to lithography and significantly surpasses it.

Embedded devices based on two-dimensional semiconductors exhibiting excellent properties even when the thickness of the material is reduced to a few atoms, – attractive, but not easy to achieve research goal of many scientific teams and private companies. The implementation of these ultra-miniature transistor devices that control the movement of electrons at a distance of several nanometers, not to mention the development of the integrated circuit manufacturing process, remains a technically challenging task.

The degree of integration in semiconductor devices is determined by the width and control efficiency of the gate electrode, which controls the movement of electrons in the transistor. In the conventional semiconductor manufacturing process, reducing the gate length to a few nanometers and beyond is impossible due to the limitations of the lithographic process. To solve this problem, scientists from the Institute of Basic Sciences in Daejeon used a feature of the two-dimensional molybdenum disulfide semiconductor, which allows it to be turned into a one-dimensional metal electrode.

This is a significant breakthrough not only for next-generation semiconductor technology, but also for fundamental materials science, as it demonstrates the possibility of synthesizing new phases of matter with the help of artificial control of crystal structures.

Scientists not only showed the possibility of growing one-dimensional metals, but also created with their help two-dimensional field effect transistors and even experimental chips. It turned out that a gate electrode with a width of 0.4 nm is capable of creating a field (controlling the conductance of the gate) with a width of 3.9 nm. Also, despite the atomic width of the channel, such a transistor showed excellent electronic conductivity and, therefore, will be quite productive for use in microcircuits. . Thanks to its simple structure, it can minimize the parasitic capacitances inherent in FinFET or Gate-All-Around transistors.

This technology may replace lithography in a few years.

Natasha Kumar

By Natasha Kumar

Natasha Kumar has been a reporter on the news desk since 2018. Before that she wrote about young adolescence and family dynamics for Styles and was the legal affairs correspondent for the Metro desk. Before joining The Times Hub, Natasha Kumar worked as a staff writer at the Village Voice and a freelancer for Newsday, The Wall Street Journal, GQ and Mirabella. To get in touch, contact me through my 1-800-268-7116

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