Samsung has made a significant breakthrough in creating a new memory technology called Selector-Only Memory (SOM). Using advanced computer modeling techniques, the company has perfected the SOM, which combines read and write speeds similar to DRAM RAM with non-volatility and stackability, making it attractive for use in modern devices.
SOM technology is based on a cross-point memory architecture, which is similar to phase memory and resistive random access memory (RRAM). It uses stacked arrays of electrodes, which allows for high productivity. Usually, selector transistors or diodes are used to address memory cells, which prevent the occurrence of unwanted electrical paths. Samsung took a different path by researching new materials that can simultaneously act as a selector and a memory element.
200% Deposit Bonus up to €3,000 180% First Deposit Bonus up to $20,000Samsung chose chalcogenide materials as the basis for a new form of non-volatile memory. In the course of research, more than 4,000 different materials were tested, from which Ab-initio computer modeling helped to select 18 of the most promising. The main focus was on improving two key parameters: threshold voltage drift and memory window optimization, which are important indicators of SOM performance.
Traditionally, Ge, As, and Se chalcogenide systems are used in threshold switches (OTS) for such studies . However, Samsung expanded this approach by focusing on a wider range of materials, taking into account connection characteristics, thermal stability and device reliability. This made it possible to achieve better performance and efficiency of the new memory.
At the upcoming International Exhibition of Electronic Devices (IEDM), which will be held from December 7 to 11 in San Francisco, researchers from Samsung will present the results of their research. They will share details of their work with chalcogenide materials and explain how their groundbreaking computer modeling is contributing to SOM development. In addition, the IMEC team will speak at IEDM, which will talk about potential atomic mechanisms affecting the operation of the selector component in SOM.